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Vol. 81, Issue 7, July 2007, pp. 1354-1363




Al2O3-modified ZnO Based Thick Film Resistors for H2-gas Sensing



Materials Research Lab, Pratap College, Amalner, 425 401, India

*Corresponding author tel.:+91-02587-224226

E-mail: plalchand_phy_aml@yahoo.co.in



Received: 10 March 2007   /Accepted: 16 July 2007   /Published: 23 July 2007


Abstract: Thick films of pure and Al2O3 doped ZnO were prepared by screen printing technique. The gas sensing performance of these films for various gases was tested. Both pure and Al2O3-doped ZnO based sensors showed highest responses to H2 gas with poor response to former as compared to later. Al2O3 (3 wt %) doped ZnO thick films showed response to H2 gas as high as 143 while pure ZnO thick films showed poor (28) to H2 gas. Doped ZnO showed quick response and fast recovery to H2 gas. The quick response and fast recovery are the main features of this sensor. The effects of microstructure and additive concentration on the gas response, selectivity, response time and recovery time of the sensor in the presence of H2 gas were studied and discussed.


Keywords: Al2O3 doped ZnO, H2 gas sensor, Gas response, Response time, Recovery time


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