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Vol. 176, Issue 8, August 2014, pp. 93-98




Study of Dark Conductivity and Photoconductivity in Amorphous InAs Films
Prepared at Different Working Pressure

1 Yanping Yao, 2 Baoxue Bao, 2 Chunling Liu, 2 Xi Chang

1 College of Information and Technology, Jilin Normal University, Siping 136000, China
2 State Key Lab on High Power Laser Diodes, Changchun University of Science and Technology, Changchun 130022, China
1 Tel.: +86-15804343721, fax: +86-0434-3292050

1 E-mail: meyanping@163.com


Received: 21 March 2014 /Accepted: 31 July 2014 /Published: 31 August 2014

Digital Sensors and Sensor Sysstems


Abstract: Dark conductivity measurements and photoconductivity measurements were made on amorphous thin films of InAs prepared at different working pressure in the temperature range of 120–300 K. The experimental data suggest the conduction in the high-temperature region is found to be due to thermally assisted tunneling of the carriers in the localized states near the band edge, while that in low-temperature region takes place through variable range hopping of charge carriers in the localized states near the Fermi level. Various Mott’s parameters have also been calculated for samples exhibiting variable range hopping conduction in the low temperature region. These results were analyzed in terms of the Davis–Mott model. The dependence of photoconductivity with light intensity shows that bimolecular recombination at high temperatures and monomolecular at low temperatures in amorphous InAs thin films.


Keywords: Amorphous, Mott’s parameters, Conductivity, InAs, Working pressure.


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