bullet Sensors & Transducers Journal

    (ISSN: 2306-8515, e-ISSN 1726-5479)

0.705

2013 Global Impact Factor

205.767

2008 e-Impact Factor

25 Top Downloaded Articles

Best Selling Articles 2012

Journal Subscription 2014

Editorial Calendar

Submit an Article

Editorial Board

Current Issue

S&T journal's cover

Sensors & Transducers Journal 2011

Sensors & Transducers Journal 2010

Sensors & Transducers Journal 2009

Sensors & Transducers Journal 2008

Sensors & Transducers Journal 2007

2000-2002 S&T e-Digest Contents

2003 S&T e-Digest Contents

2004 S&T e-Digest Contents

2005 S&T e-Digest Contents

2006 S&T e-Digest Contents

 

Best Articles 2011

 

 

 

Vol. 176, Issue 8, August 2014, pp. 93-98

 

Bullet

 

Study of Dark Conductivity and Photoconductivity in Amorphous InAs Films
Prepared at Different Working Pressure
 

1 Yanping Yao, 2 Baoxue Bao, 2 Chunling Liu, 2 Xi Chang

1 College of Information and Technology, Jilin Normal University, Siping 136000, China
2 State Key Lab on High Power Laser Diodes, Changchun University of Science and Technology, Changchun 130022, China
1 Tel.: +86-15804343721, fax: +86-0434-3292050

1 E-mail: meyanping@163.com

 

Received: 21 March 2014 /Accepted: 31 July 2014 /Published: 31 August 2014

Digital Sensors and Sensor Sysstems

 

Abstract: Dark conductivity measurements and photoconductivity measurements were made on amorphous thin films of InAs prepared at different working pressure in the temperature range of 120–300 K. The experimental data suggest the conduction in the high-temperature region is found to be due to thermally assisted tunneling of the carriers in the localized states near the band edge, while that in low-temperature region takes place through variable range hopping of charge carriers in the localized states near the Fermi level. Various Mott’s parameters have also been calculated for samples exhibiting variable range hopping conduction in the low temperature region. These results were analyzed in terms of the Davis–Mott model. The dependence of photoconductivity with light intensity shows that bimolecular recombination at high temperatures and monomolecular at low temperatures in amorphous InAs thin films.

 

Keywords: Amorphous, Mott’s parameters, Conductivity, InAs, Working pressure.

 

Acrobat reader logo Click <here> or title of paper to download the full pages article in pdf format

 

 

Subscribe the full-page Sensors & Transducers journal in print (paper) or pdf formats

(shipping cost by standard mail for paper version is included)

(25 % discount for IFSA Members)

 

 

 

Alternatively we accept a money transfer to our bank account. Please contact for details: sales@sensorsportal.com

 

 

Download <here> the Library Journal Recommendation Form

 

 

 

 

 


1999 - 2014 Copyright ©, International Frequency Sensor Association (IFSA) Publishing, S.L. All Rights Reserved.


Home - News - Links - Archives - Tools - Voltage-to-Frequency Converters - Standardization - Patents - Marketplace - Projects - Wish List - e-Shop - Sensor Jobs - Membership - Videos - Publishing - Site Map - Subscribe - Search

 Members Area -Sensors Portal -Training Courses - S&T Digest - For advertisers - Bookstore - Forums - Polls - Submit Press Release - Submit White Paper - Testimonies - Twitter - Facebook - LinkedIn