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Vol. 192, Issue 9, September 2015, pp. 90-95




Performance Characteristics of GaAs/Al0.32Ga0.68As Quantum-Well Lasers

HADJAJ Fatima, BELGHACHI Abderrahmane, and HELMAOUI Abderrachid

Laboratory physics and semiconductor devices, Bechar University Po. Box No. 417, 08000 Bechar, Algeria
Tel.: +213-792-904250; fax: +213-49-220960

E-mail: fatima_hadjaj_1979@yahoo.fr


Received: 1 September 2015 /Accepted: 28 September 2015 /Published: 30 September 2015

Digital Sensors and Sensor Sysstems


Abstract: Simulating electrical characteristics of quantum well laser diodes helps understanding their behavior and provides an insight comprehension of the influence of technological parameters, such as number of wells, cavity length and effect of temperature on their performance. In this paper we present a study of electrical characteristics of GaAs/Al0.32Ga0.68As quantum well laser diodes emitting at 0.8 m. Our results indicate that better output performance and lower threshold current could be obtained for a single quantum well and losses are reduced, and we observe also a gradual and nonlinear decrease in output optical power with the increase of temperature.


Keywords: Multi-quantum well lasers, electrical characteristics, GaAs/AlGaAs.


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