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Vol. 214, Issue 7, July 2017, pp. 58-63

 

Bullet

 

T-FinFET Mobility Enhancement from Process-Induced Stress and Compact Model Development
 

Wanjun Wang, * Jin He, Bing Xie, Guangjin Ma, Guoqing Hu, Chunlai Li, Daye Lin, Jingjing Liu, Ying Yu, Zhangyuan Chen and Zhiping Zhou

Peking University Shenzhen SoC Key Laboratory, PKU-HKUST Shenzhen-Hong Kong Institution, Shenzhen 518057, China
Tel: 15013563293

E-mail: frankhe@pku.edu.cn

 

Received: 1 June 2017 /Accepted: 12 July 2017 /Published: 31 July 2017

Digital Sensors and Sensor Sysstems

 

Abstract: In the advanced CMOS process lines, the process-induced stress is often used to increase carrier mobility so as to improve MOSFET performance. It also strongly affects the carrier mobility of T-FinFET as long as it is fabricated with the CMOS process as always done in experiment tunneling FET device. Here we report the effect of process-induced stress on mobility enhancement and a corresponding compact model. The layout dependence of T-FinFETís carrier mobility due to process-induced stress is efficiently captured. The mobility model is verified for different layout dimensions for several stress-inducing process technologies through both process simulations and experimental data.

 

Keywords: nanometerT-FinFET, process technology, strain effect, performane enhancement, modeling

 

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