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Vol. 235, Issue 7, July 2019, pp. 31-36

 

Bullet

 

Temperature Investigation of Phonon-plasmon Modes in 4H-SiC Homoepitaxial Layers
 

1, 2, Artur Dobrowolski, 1, 2, Jakub Jagiełło, 1 Wawrzyniec Kaszub, 1 Tymoteusz Ciuk, 1 Kinga Kościewicz, 1 Paweł P. Michałowski,
1
Paweł Ciepielewski, 2 Andrzej Wysmołek, 1 Adrianna Chamryga and 1 Pawel Kamiński

1 Łukasiewicz Research Network - Institute of Electronic Materials Technology, Wolczynska 133, Warsaw, 01-919, Poland
2 Faculty of Physics, University of Warsaw, Pasteura 5, Warsaw, 02-093, Poland
E-mail: artur.dobrowolski@itme.edu.pl, jakub.jagiello@itme.edu.pl

 

Received: 15 April 2019 /Accepted: 28 May 2019 /Published: 31 July 2019

Digital Sensors and Sensor Sysstems

 

Abstract: Semiconductor devices based on silicon carbide play an important role as components for power electronic systems. Nowadays itís recognized that at least 50 percent of electricity distribution all over the world is controlled by such elements. Itís also expected that within a decade, the power devicesí share in electricity conversion will rise from todayís 30 to 80 %. This will require next generation of energy- efficient devices for power electronics.

 

Keywords: SiC, Power devices, Raman spectroscopy, SIMS.

 

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