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Vol. 71, Issue 9, September 2006, pp. 721-728




Surface Modified TTO Thick Film Resistors for NH3 Gas Sensing



Material Research Lab, P.G. Department of Physics, Pratap College, Amalner-425 401,

Maharashtra, India

*Corresponding Author: E-mail: plalchand_phy_aml@yahoo.co.in



Received: 6 June 2006   /Accepted: 20 September 2006   /Published: 25 September 2006


Abstract: Ti0.8Sn0.2O2-Titanium tin oxide (TTO) compound was prepared by using mechanochemical processing. AR grade TiCl3.2H2O (0.8 M) and SnCl4.5H2O (0.2 M) were mixed followed by calcination and ball milling. As prepared TTO was then used as starting material to fabricate the sensors in thick film form. Thick films were prepared by screen-printing technology on glass substrate. The dipping technique was used to obtain surface-cupricated TTO films in which copper was incorporated as additive. The thick films so obtained were fired at 550oC. The characterization of the films was done by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The gas response measurements were carried out as function of operating temperature (200-4000C) for different gases. These films were found to be most sensitive to NH3 gas. Surface cupricated film showed high gas response, fast response and quick recovery to NH3 gas. The result indicated that Cu modification would be responsible for improving stability and gas response of the sensor. The film dipped for 10 minute was observed to be most sensitive to NH3 gas at an operating temperature 300oC.


Keywords: Ti0.8Sn0.2O2 (TTO); Thick films; Cuprication; NH3 gas sensor; Gas response; Selectivity


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