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Vol. 15, Special Issue, October 2012, pp. 1-13


Selected papers from Nanotech Conference & Expo (NanoTech' 2012),
18-21 June 2012, Santa Clara, California, USA




Shock Resistance of MEMS Capacitive Accelerometers


Yongkang Tao, Yunfeng Liu, and Jingxin Dong

Department of Precision Instruments and Mechanology,

Tsinghua University, Beijing, 100084, China

Tel.: +86-10-62796732, fax: +86-10-62792119, E-mail: taoyongkang@tsinghua.org.cn



Received: 14 September 2012   /Accepted: 1 October 2012   /Published: 8 October 2012

Digital Sensors and Sensor Sysstems


Abstract: With deeper research of silicon micro accelerometer, and its wider applications in the commercial fields such as drilling, consumer electronics, automotive industry, and in special military field, the device’s shock resistance has been an urgent issue. The paper presents a theoretical approach of the micro structure's shock response, and focuses on the finite element impact dynamic simulation considering the contact effects of stoppers. A kind of MEMS capacitive accelerometers are designed and fabricated. Failure types due to different shock circumstances are investigated, and experimental estimation of the micro-structure's three-orientation shock resistibility is analyzed, using Hopkinson Pressure Bar (HPB) apparatus. Results indicate that beams' stiffness and stoppers' areas are the key factors to determine the shock resistance, and pulse duration also plays a critical role in the shock effects of micro-machined structures.


Keywords: MEMS accelerometer, Shock resistance, Impact simulation, HPB, Failure analysis



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