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Vol. 27, Special Issue, May 2014, pp. 9-14

 

Bullet

 

Current Transport Mechanisms and Capacitance Characteristic in the InN/InP Schottky Structures
 

1,* K. AMEUR, 1 Z. BENAMARA, 1 H. MAZARI, 1 N. BENSEDDIK, 1 R. KHELIFI, 1 M. MOSTEFAOUI, 1 M. A. BENAMARA, 2 B. GRUZZA,
3
J. M. BLUET, 3 C. BRU-CHEVALLIER

1 Laboratoire de Microélectronique Appliquée, Département d’électronique, Université Djillali Liabés de Sidi Bel Abbés, 22000 Sidi Bel Abbés, Algérie
2 Laboratoire des Sciences des Matériaux pour l’Electronique et d’Automatique, Université Blaise Pascal, Les Cézeaux, Clermont II, France
3 Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
1 Tel.: +213 48 55 12 84, fax: +213 48 55 12 84

1 E-mail: kheira_ameur@yahoo.fr

 

Received: 31 December 2012 /Accepted: 22 November 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: In this work, electrical characterization of the current-voltage and capacitance- voltage curves for the Metal/InN/InP Schottky structures are investigated. We have studied electrically thin InN films realized by the nitridation of InP (100) substrates using a Glow Discharge Source (GDS) in ultra high vacuum. The I (V) curves have exhibited anomalous two-step (kink) forward bias behaviour; a suitable fit was only obtained by using a model of two discrete diodes in parallel. Thus, we have calculated, using I(V) and C(V) curves of Hg/InN/InP Schottky structures, the ideality factor n, the saturation current Is, the barrier height jB, the series resistance Rs, the doping concentration Nd and the diffusion voltage Vd. We have also presented the band diagram of this heterojunction which indicates the presence of a channel formed by holes at the interface InN/InP which explain by the presence of two-dimensional electron gas (2-DEG) and this was noticed in the presentation of characteristics C(V).

 

Keywords: Indium nitride, Indium phosphide (100), Electrical measurements, Schottky diode.

 

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