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Vol. 27, Special Issue, May 2014, pp. 54-61

 

Bullet

 

TopSPICE Simulations for Temperature Compensation of ISFET/MEMFET Micro-Sensor
 

1, 2 Sawsen AZZOUZI, 1, 2 Jihen CHERMITI, 1, 2 Mounir BEN ALI, 1 Chérif DRIDI, 3 Abdelhamid ERRACHID, 3 Nicole JAFFREZIC-RENAULT

1 University of Sousse, Institut S`upérieur des Sciences Appliquées et de Technologie de Sousse, Cité Ettaffala 4003 Sousse, Tunisie
2 University of Carthage, Unité de Recherche de Physique des Semi-conducteurs et Capteurs, IPEST, La Marsa, 2070 Tunis, Tunisie
3 Institut des Sciences Analytiques de Lyon, ISA, UMR 5280, Université Claude Bernard Lyon 1, France

E-mail: mounirbenali@yahoo.com

 

Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: In this work, an ISFET (Ion Sensitive Field Effect Transistor)/MEMFET (Membrane Field Effect Transistor) interface circuit with temperature compensation has been successfully designed and simulated. In each interface, we used the macro-model of ISFET/MEMFET based chemical sensors simulated in TopSPICE. The simulation results of the different sensing circuits of ISFET/MEMFETs for temperature compensation show that the readout configuration for ISFET/MEMFET sensors based on Wheatstone-Bridge connection is the most effective with a temperature drift 5´10-6 mV/°C.

 

Keywords: Chemical sensors, ISFETs/MEMFETs, Site-binding model, TopSPICE, Temperature compensation.

 

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