bullet Sensors & Transducers Journal

    (ISSN: 2306-8515, e-ISSN 1726-5479)

205.767

2008 e-Impact Factor

25 Top Downloaded Articles

Best Selling Articles 2012

Journal Subscription 2014

Editorial Calendar

Submit an Article

Editorial Board

Current Issue

S&T journal's cover

Sensors & Transducers Journal 2011

Sensors & Transducers Journal 2010

Sensors & Transducers Journal 2009

Sensors & Transducers Journal 2008

Sensors & Transducers Journal 2007

2000-2002 S&T e-Digest Contents

2003 S&T e-Digest Contents

2004 S&T e-Digest Contents

2005 S&T e-Digest Contents

2006 S&T e-Digest Contents

 

Best Articles 2011

 

 

 

Vol. 27, Special Issue, May 2014, pp. 82-86

 

Bullet

 

Investigation of Performance Silicon Heterojunction Solar Cells Using a-Si: H or a-SiC: H at Emitter Layer Through AMPS-1D Simulations
 

Asmaa BENSMAIN, Hadjira TAYOUB, Baya ZEBENTOUT and Zineb BENAMARA

Applied Microelectronic Laboratory, Faculty of Engineering, University of Sidi Bel Abbes, Algeria

E-mail: bensmain.asmaa@gmail.com

 

 

Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: We offer a numerical simulation tool, AMPS-1D, which allows to model homo- as well as heterojunction devices. AMPS-1D is the short form of automat for simulation of heterostructures. The program solves the one dimensional semiconductor equations in steady-state. Furthermore, a variety of common characterization techniques have been implemented, current- voltage, external quantum efficiency, conduction and valence band. A user-friendly interface allows to easily perform parameter variations, and to visualize and compare your simulations. In this work, The silicon heterojunction cell performances are investigated by detailed described on external quantum efficiency, and light current-voltage characteristics by recognized simulator AMPS-1D (Analysis of Micro- electronics and Photonic Structures). The objective of this work is to study the correlation between the emitter properties of both heterojunction cells a-Si:H/c-Si and a-SiC:H/c-Si (absorption, defect profiles and energy band offsets) and the carrier collection.

 

Keywords: Heterojunction, AMPS-1D, Solar Cells, a-Si: H/c-Si, a-SiC: H/c-Si.

 

Acrobat reader logo Click <here> or title of paper to download the full pages article in pdf format

 

 

Subscribe the full-page Sensors & Transducers journal in print (paper) or pdf formats

(shipping cost by standard mail for paper version is included)

(25 % discount for IFSA Members)

 

 

 

Alternatively we accept a money transfer to our bank account. Please contact for details: sales@sensorsportal.com

 

 

Download <here> the Library Journal Recommendation Form

 

 

 

 

 


1999 - 2014 Copyright , International Frequency Sensor Association (IFSA) Publishing, S.L. All Rights Reserved.


Home - News - Links - Archives - Tools - Voltage-to-Frequency Converters - Standardization - Patents - Marketplace - Projects - Wish List - e-Shop - Sensor Jobs - Membership - Videos - Publishing - Site Map - Subscribe - Search

 Members Area -Sensors Portal -Training Courses - S&T Digest - For advertisers - Bookstore - Forums - Polls - Submit Press Release - Submit White Paper - Testimonies - Twitter - Facebook - LinkedIn