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Vol. 27, Special Issue, May 2014, pp. 87-92

 

Bullet

 

Characterization and Modeling I(V) of the Gate Schottky Structures HEMTs Ni/Au/AlInN/GaN
 

1 N. Benyahya, 1 H. Mazari, 1 N. Benseddik, 1 Z. Benamara, 1 M. Mostefaoui, 1 K. Ameur, 1 R. Khelifi, 2 J. M. Bluet,
2
W. Chikhaoui,2 C. Bru-Chevallier

1 Laboratoire de Microélectronique Appliquée, Département d’électronique, Université Djillali Liabés de Sidi Bel-Abbes, 22000 Sidi Bel-Abbes, Algérie
2 Université de Lyon, Institut des Nanotechnologies de Lyon, INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
1 Tel.: +213 48551284, fax: +213 48551284

1 E-mail: benyahya22@hotmail.fr

 

Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: In this paper, we have studied the Schottky contact of Ni/Au/AlInN/GaN HEMTs. The current–voltage Igs (Vgs) of Ni/Au/AlInN/GaN structures were investigated at room temperature. The electrical parameters such as ideality factor (2.3), barrier height (0.72 eV) and series resistance (33 W) were evaluated from I(V) data, the threshold voltage (-2.42 V), the 2D gas density (1.35 ´ 1013 cm-2) and barrier height (0.94 eV) were evaluated from C(V) data.

 

Keywords: GaN, AlInN, Electrical characterization, HEMT transistor.

 

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