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Vol. 27, Special Issue, May 2014, pp. 100-105

 

Bullet

 

Neural Circuitry Based on Single Electron Transistors and Single Electron Memories
 

Aïmen BOUBAKER and Adel KALBOUSSI

Faculty of Science of Monastir, Microelectronics and instrumentation laboratory, Avenue de l’Environnement -5019-Monastir-Tunisia
Tel.: +216 98 226 408, fax: +216 72 220 181

E-mail: aimen.boubaker@ipein.rnu.tn

 

Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: In this paper, we propose and explain a neural circuitry based on single electron transistors ‘SET’ which can be used in classification and recognition. We implement, after that, a Winner-Take-All ‘WTA’ neural network with lateral inhibition architecture. The original idea of this work is reflected, first, in the proposed new single electron memory ‘SEM’ design by hybridising two promising Single Electron Memory ‘SEM’ and the MTJ/Ring memory and second, in modeling and simulation results of neural memory based on SET. We prove the charge storage in quantum dot in two types of memories.

 

Keywords: Neural circuitry, Single Electron Transistor, Winner-Take-All, Single Electron Memory.

 

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