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Vol. 27, Special Issue, May 2014, pp. 122-126

 

Bullet

 

Photocurrent Mechanisms of Low-Temperature Processed Polysilicon Thin-Film Transistors
 

1 Yamina BOUREZIG, 1 Khalid TOUMI, 1 Badra BOUABDALLAH, 1 Mohammed DEBAB, 2 Baya ZEBENTOUT

1 Laboratoire d’Elaboration et de Caractérisation de Matériaux, Département d’Electronique. Université Djilali Liabés de Sidi Bel Abbés.22000, Algeria
2 Laboratoire de Microélectronique Appliquée, Département d’Electronique. Université Djilali Liabés de Sidi Bel Abbés.22000, Algeria
1 Tel.: ++ 21391432862,

E-mail: a_bourezig@yahoo.fr

 

Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: Steady state photocurrents have been measured in poly-Si TFTs fabricated from crystallized films deposited in an initially amorphous state by LPCVD technique. The transfer characteristics of poly-Si TFT change remarkably by illumination in the subthreshold and off-state regions. It is discovered that the photocurrent Iph is more than three orders of magnitude greater than the dark currents. In the subthreshold and small negative VGS regions, the photocurrent is attributed to thermionic emission of electrons over the GB barriers and ohmic conduction respectively. It depends on the gate bias and channel length. However, Iph in high VGS region is independent on these two parameters. It is therefore set only by the light-induced generation of electrons and holes. In addition, the photocurrent increases linearly with film thickness. The observed decrease for films thinner than 0.1 µm could be due to the increased influence of surface recombination at the poly-Si/SiO2 interfaces.

 

Keywords: Polycrystalline-Silicon, TFT, LPCVD, Photocurrents, Photosensitivity, Grain boundaries.

 

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