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Vol. 27, Special Issue, May 2014, pp. 147-150




The Inversion Layer Evolution According to the Report of Substrat Doping /Gate Doping
of a MSP OS Structure

H. Dib, Z. Benamara, Z. Kari

LTTNS, Université Djillali Liabes, Sidi Bel Abbés (22000), Algerie

E-mail: hh_dib@yahoo.fr


Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems


Abstract: The inversion layer in the sample containing MOS structure is a very significant parameter for the operation of these components. In this question we summons it self interested in the simulation of the capacitance of MSPOS structure. We propose a numerical model, based on the resolution of the Poisson's equation. We calculate the distribution of the electrostatic potential, which enabled us to deduce characteristic C (V) from it. We study the relation between the development of the inversion layer and the report NDP (gate polysilicon doping)/NDS (doping of the substrate). In let us simulate curves C (V) according to the doping of the substrate and the polysilicon gate. It is noted that when the report of doping (NDP/NDS) is higher than (100), the gate polysilicon is regarded as a metal; when the report of doping is between (10) and (100), the gate polysilicon is in desertion and when the report of doping is lower than (10), the gate polysilicon is in inversion. Other information can be deduced from simulated curves C (V).


Keywords: Inversion region, MSPOS structure, Doping.


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