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Vol. 27, Special Issue, May 2014, pp. 151-155

 

Bullet

 

Interface States Densities Effect at SiO2/ Polysilicon and SiO2/ Monosilicon Surfaces on N-polysilicon /Oxide/ P-Monosilicon Capacitance
 

H. Dib, Z. Benamara, Z. Kari

LTTNS, Université Djillali Liabes Sidi Bel Abbés (22000), Algerie

E-mail: hh_dib@yahoo.fr

 

Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: the interface states have a very significant role in the components containing MOS structures. In this paper we study the interface states densities effect at SiO2/ N-polysilicon and SiO2/ P- monosilicon surfaces on metal/polysilicon /oxide/ monosilicon capacitance. The numerical solution of poisson's equation and the determination of the charge variation in the structure induced by application of external bias (Vg) allow simulating the capacitance-voltage MSPOS characteristics. The results show that the interface states at SiO2/ polysilicon and SiO2/ monosilicon surfaces translate the CT (V) curve about positive voltage and cause the increase of the minimum value of capacitance. The effect of interface states on C (V) curves is neglected for the polysilicon doping concentration in order to 1019 cm-3. For this doping level, the C (V) curves are identical to the C (V) of the monocristalline MOS structure.

 

Keywords: MSPOS structure, Interface states densities.

 

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