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Vol. 27, Special Issue, May 2014, pp. 180-184




Effect of Barrier Metal Based on Titanium or Molybdenum in Characteristics of 4H-SiC Schottky Diodes

1, 2 M. Ben Karoui, 1 K. Shili, 1, * R. Gharbi, 1 M. Fathallah, 3 S. Ferrero, 3 C. F. Pirri

1 Laboratoire des Semi-conducteurs et Dispositifs Electroniques (LSDE-C3S) Ecole Supérieure des Sciences et Techniques de Tunis 05 Av. Taha Hussein 1008, Montfleury, University of Tunis, Tunisia
2 Centre des Recherches et des Technologies de l'Energie. Technopole Borj Cédria B. P N°95- 2050 Hammam Lif- Tunisia
3 Politecnico di Torino, 24 c.so Duca Degli Abruzzi, 10129 Torino, Italy
Tel.: (216)71496066. fax: (216)71391166

* E-mail: rached.gharbi@esstt.rnu.tn


Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems


Abstract: The electrical properties were extracted by I-V and C-V analysis, performed from 10 K to 450 K. When the annealing temperature varied to 400 °C, the Schottky barrier height (SBH) increased from 0.85 Ev to 1.20 eV in Ti/4H-SiC whereas in the Mo/4H-SiC the SBH varied from 1.04 eV to 1.10 eV. Deformation of J-V-T characteristics was observed in two types of devices when the temperature decreases from 300 K to 10 K. The electrical properties and the stability of the devices have been correlated to the fabrication processes and to the metal/semiconductor interfaces. Mo-based contacts show better behaviour in forward polarization when compared to the Ti-based Schottky contacts, with ideality factors close to the unity even after the annealing process. However, Mo-based contacts show leakage currents higher than that measured on the more optimized Ti-based Schottky.


Keywords: 4H-SiC, Schottky contact, Molybdenum, Titanium, Electrical properties.


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