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Vol. 27, Special Issue, May 2014, pp. 198-201




Characterization of ITO Thin Films Prepared by Sol-gel Spin-Coating Technique

1 Mokhtar HJIRI, 1 Faouzi GHRIBI, 1, 2 Lassaad EL MIR

1 Laboratory of Physics of Materials and Nanomaterials Applied at Environment (LaPhyMNE), Gabes University, Faculty of Sciences in Gabes, Gabes, Tunisia
2 Al Imam Mohammad Ibn Saud Islamic University (IMSIU), College of Sciences, Department of Physics, Riyadh 11623, Saudi Arabia
1 Tel.: +216 97408756, fax: +216 75392421

E-mail: Lassaad.ElMir@fsg.rnu.tn


Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems


Abstract: Indium tin oxide (ITO) thin films have been prepared on glass substrate using sol-gel spin-coating technique with different dopant concentrations. The sol was prepared using 2- methoxyethanol and triethylamine (TEA) as a solvent and stabilizer, respectively. Indium chloride (InCl3) was used as a precursor and tin chloride (SnCl2, 2H2O) as a doping source. X-ray diffraction result indicates that the ITO thin films have the polycrystalline structure. The optical transmittance spectrum indicates the average transmittance higher than 80 % in visible region. The band gap energy is varied between 3.5 and 4.0 eV. From AFM analysis, we can show that all films have a good roughness. Four point method indicates that the sample with doping concentration of 5 % at. Has the lowest sheet resistance (277 W/Sq). From characterization results, its clear that the obtained samples are promising for gas detection.


Keywords: Thin film, TCO, ITO, Gas sensors, Sol-gel, spin coating.


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