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Vol. 27, Special Issue, May 2014, pp. 217-220

 

Bullet

 

Characterization and Modeling of Schottky Diodes Based on Bulk GaN Unintentionally Doped
 

1 R. KHELIFI, 1 H. MAZARI, 1 S. MANSOURI, 1 Z. BENAMARA, 1 M. MOSTEFAOUI, 1 K. AMEUR, 1 N. BENSEDDIK, 2 P. MARIE, 2 P. RUTERANA,
2
I. MONNET, 3 J. M. BLUET, 3 C. BRU-CHEVALLIER

1 Laboratoire de Microélectronique Appliquée, Département d’électronique, Université Djillali Liabés de Sidi Bel-Abbes, 22000 Sidi Bel-Abbes, Algérie
2 Centre de Recherche sur les Ions, les Matériaux et la Photonique, CIMAP UMR 6252CNRS-ENSICAEN-CEA-UCBN, 14250 Caen Cedex France
3 Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
1 Tel.:+213 792970619, fax: +213 4855 1284

E-mail: reski_k81@hotmail.fr

 

Received: 23 November 2013 /Accepted: 12 January 2014 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: In this paper, we have studied Au/n-GaN Schottky diodes. The substrates are realized on bulk GaN. The current-voltage (I-V) and capacitance–voltage (C–V) of Au/n-GaN structures were investigated at room temperature. The electrical parameters such as saturation current I0 (1.98 ´ 10-7 A), ideality factor n (1.02), barrier height fbn (0.65 eV) and series resistance Rs (84 W) were evaluated from I–V experimental data. The characteristics in these data structures Schottky Au/n-GaN can help to highlight the main conduction mechanisms observed. In addition to the thermionic current present in our structures, the leakage current intervenes too. The barrier height and doping determined from the (C-V) characteristic are of the order of 1.17 eV and 8.16 ´ 1016 cm-3, respectively. The average density of surface states Nss determined set to 1.09 ´ 1012 eV-1 cm-2.

 

Keywords: Au/GaN; I-V; C-V; Schottky Diodes.

 

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