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Vol. 27, Special Issue, May 2014, pp. 221-224

 

Bullet

 

Sn Doped In2S3 Films Elaborated by Spray Technique
 

1 M. KRAINI, 1 N. BOUGUILA, 2, 3 A. TIMOUMI, 1 S. ALAYA

1 Laboratoire de Physique des Matériaux et des Nanomatériaux appliquée à l’Environnement, Faculté des Sciences de Gabés, Cité Erriadh Manara Zrig 6072 Gabés, Tunisie
2 Laboratoire de Photovoltaïque et Matériaux Semiconducteurs, Département de Génie Industriel, Ecole Nationale d’Ingenieurs de Tunis, PB 37, Le Belvédère, 1002, Tunisie
3 Department of Physics, College of Applied Science, Umm AL-Qura University, Makka El Mukarrama, Saoudia Arabia, KSA
1 Tel.: +216 96 490 722, fax: +216 75 392 421

E-mail: mabrouk.karini@gmail.com

 

Received: 23 November 2013 /Accepted: 12 January 2014 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: Tin doped In2S3 films were grown by the chemical spray pyrolysis (CSP) method using the pneumatic spray set-up and compressed air as a carrier gas. The spraying solution contained indium chloride (InCl3), thiourea [CS(NH2)2] and (SnCl4) at a molar ratio of S/In = 2.5. The deposition was carried out at 350 °C on glass substrates. The Sn doping level was changed with Sn/In = 0-8 % in solution. The effect of Sn concentration on electrical, optical and structural properties of In2S3:Sn thin films have been investigated.

 

Keywords: Indium sulfide, Thin film, Solar cell, Tin doping, Spray pyrolysis.

 

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