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Vol. 27, Special Issue, May 2014, pp. 253-257

 

Bullet

 

Physical Mechanisms Responsible for Electrical Conduction in Pt/GaN Schottky Diodes
 

1 H. MAZARI, 1 K. AMEUR, 1 N. BENSEDDIK, 1 Z. BENAMARA, 1 R. KHELIFI, 1 M. MOSTEFAOUI, 1 N. ZOUGAGH, 1 N. BENYAHYA, 2 R. BECHAREF, 2 G. BASSOU,3 B. GRUZZA, 4 J. M. BLUET, 4 C. BRU-CHEVALLIER

1 Laboratoire de Microélectronique Appliquée, Département d’électronique, Université Djillali Liabés de Sidi Bel-Abbes, 22000 Sidi Bel-Abbes, Algérie
2 Laboratoire d’Elaboration et de Caractérisation des Matériaux, Université Djillali Liabés de Sidi Bel-Abbes, 22000 Sidi Bel-Abbes, Algérie
3 Laboratoire des Sciences des Matériaux pour l’Electronique et d’Automatique, Université Blaise Pascal, Les Cézeaux, Clermont II, Aubiére Cedex, France
4 Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
Tel.: +213 48 55 12 84, fax: +213 48 55 12 84

E-mail: h_mazari2005@yahoo.fr

 

Received: 31 December 2012 /Accepted: 10 August 2013 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: The current-voltage (I-V) characteristics of Pt/(n.u.d)-GaN and Pt/Si-doped-GaN diodes Schottky are investigated. Based on these measurements, physical mechanisms responsible for electrical conduction have been suggested. The contribution of thermionic-emission current and various other current transport mechanisms were assumed when evaluating the Schottky barrier height. Thus the generation-recombination, tunneling and leakage currents caused by inhomogeneities and defects at metal-semiconductor interface were taken into account.

 

Keywords: GaN, Electrical Characterization, Modeling, Schottky Diode.

 

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