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Vol. 27, Special Issue, May 2014, pp. 277-279

 

Bullet

 

Effect of Passivation on Microwave Power Performances of AlGaN/GaN/Si HEMTs
 

1 H. MOSBAHI, 1 M. CHARFEDDINE, 1 M. GASSOUMI, 2 H. MEJRI, 3 C. GAQUIÈRE, 3 B. GRIMBERT, 1 M. A. ZAIDI, 1 H. MAAREF

1 Laboratoire de Micro-optoélectronique et Nanostructures, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir, Tunisia
2 Laboratoire d’électronique et de microélectronique, Département de Physique, Faculté des Sciences de Monastir, 5019 Monastir, and Unité de recherche de Mathématiques Appliquées et Physique Mathématique, Ecole Préparatoire aux Académies Militaires Sousse 4029, Tunisia
3 Institut d’Electronique et de Microélectronique et de Nanotechnologie IEMN, Université des Sciences et Technologies de Lille, Avenue Poincaré, 59652 Villeneuve d’Ascq Cedex, France

1 E-mail: hanamosbahi@yahoo.fr

 

Received: 23 November 2013 /Accepted: 12 January 2014 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: This paper reports on the use of plasma assisted molecular beam epitaxy of AlGaN/GaN high electron mobility transistors (HEMTs) grown on silicon substrate. Surface passivation effects on AlGaN/GaN HEMTs were studied using SiO2/SiN dielectric layers grown by plasma enhanced chemical vapor deposition. The direct current measurement, pulsed characteristics and microwave small-signal characteristics were studied before and after passivation. An improvement of drain-source current density and the extrinsic transconductance was observed on the passivated HEMTs when compared with the unpassivated HEMTs. An enhancement of cut-off frequency (ft) and maximum power gain (fmax) was also observed for the devices with full SiO2/SiN passivation. A good correlation is found between pulsed and power measurements.

 

Keywords: AlGaN/GaN HEMTs, SiO2/SiN Passivation, Pulse measurements.

 

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