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Vol. 27, Special Issue, May 2014, pp. 280-284

 

Bullet

 

Current-Voltage-Temperature (I-V-T) Characteristics of Schottky-Gate
of the Structures AlGaN/GaN HEMTs
 

1 M. MOSTEFAOUI, 1 H. MAZARI, 1 S. MANSOURI, 1 Z. BENAMARA, 1 R. KHELIFI, 1 K. AMEUR, 1 N. BENSEDDIK, 1 N. BENYAHYA,
2
J. M. BLUET, 2 C. BRU-CHEVALLIER, 2 W. CHIKHAOUI

1 Laboratoire de Microélectronique Appliquée, Département d’électronique, Université Djillali Liabés de Sidi Bel-Abbes, 22000 Sidi Bel-Abbes, Algérie
2 Université de Lyon, Institut des Nanotechnologies de Lyon INL-UMR5270, CNRS, INSA de Lyon, Villeurbanne F-69621, France
1 Tel.:+213 48551284, fax: +213 4855 1284

1 E-mail: mohamedmicro82@gmail.com

 

Received: 23 November 2013 /Accepted: 12 January 2014 /Published: 26 May 2014

Digital Sensors and Sensor Sysstems

 

Abstract: In this study, the forward bias current-voltage-temperature (I-V-T) characteristics of (Mo/Au)–AlGaN/GaN high electron mobility transistors (HEMTs) have been investigated over the temperature range of 100-450K. The barrier height (Fb), ideality factor (n), series resistance (Rs) and shunt resistance (Rp) of (Mo/Au)–AlGaN/GaN HEMTs have been calculated from their experimental forward bias current–voltage-temperature (I-V-T). The capacitance–voltage (C–V) of (Au/Mo)- AlGaN/GaN HEMTs were investigated at room temperature. The doping concentration (Nd) and the bi- dimensional sheet carrier density (ns) were evaluated from
C–V data. The experimental results show that all forward bias semilogarithmic I-V curves for the different temperatures have a nearly common cross point at a certain bias voltage, even with finite series resistance (Rs). We found that the value of
Fb and Rs increases by cons n and Rp decreases with increasing temperature. The values of Nss obtained by taking into account the Rs are about one order lower than those obtained without considering the Rs.

 

Keywords: AlGaN/GaN, HEMTs, LPMOCVD, I-V-T Characteristics.

 

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