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Vol. 27, Special Issue, May 2014, pp. 336-339




Spin Relaxation Time in InAlAs/AlGaAs Quantum Dots

1 N. Sellami, 1 A. Melliti, 1 M. A. Maaref, 2 R. Kuszelewiez, 2 A. Lemaître

1 Unite de Recherche de Physique des Semiconducteurs et Capteurs, Institut Préparatoire aux Etudes Scientifiques et Techniques, La Marsa 2070, Tunisia
2 Laboratoire de Photonique et Nanostructures, CNRS, UPR 20, France
Tel.: + (216) 24145989, fax: + (216) 71391166

E-mail: trikinajette@yahoo.fr


Received: 23 November 2013 /Accepted: 12 January 2014 /Published: 2014

Digital Sensors and Sensor Sysstems


Abstract: We report systematic temperature dependent measurements of spin relaxation time in self-assembled In0.72Al0.28As/Al0.28Ga0.72As quantum dots by continuous-wave photoluminescence. The degree of circular polarization decreases as a function of temperature. The spin relaxation time tS is deduced from the circular polarization degree using a three dimensional pseudo- spin precession model. The spin relaxation time decreases rapidly from few hundred picoseconds at 10 K to few tens picoseconds at 85 K. This large change of the spin relaxation time is explained in terms of acoustic phonon emission mechanism.


Keywords: Semiconductors, Quantum dots, Spin relaxation, Photoluminescence, Circular polarization.


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