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Vol. 186, Issue 3, March 2015, pp. 129-133




Real Time In-circuit Condition Monitoring of MOSFET in Power Converters

1Shakeb A. Khan, 1Tariqul Islam, 1Neeraj Khera, 2 A.K. Agarwala

1Department of Electrical Engineering, Jamia Millia Islamia, Delhi-110025, India
2Instrument Design Development Centre, IIT, Delhi-110016, India
1 Tel.:+ 91-9650087393, fax: +91 (11) 2698 0229

1 E-mail: skhan3@jmi.ac.in


Received: 11 December2014 /Accepted: 27 February 2015 / Published: 31 March 2015

Digital Sensors and Sensor Sysstems


Abstract: Abstract:This paper presents simple and low-cost, real time in-circuit condition monitoring of MOSFET in power electronic converters. Design metrics requirements like low cost, small size, high power factor, low percentage of total harmonic distortion etc. requires the power electronic systems to operate at high frequencies and at high power density. Failures of power converters are attributed largely by aging of power MOSFETs at high switching frequencies. Therefore, real time in-circuit prognostic of MOSFET needs to be done before their selection for power system design. Accelerated aging tests are performed in different circuits to determine the wear out failure of critical components based on their parametric degradation. In this paper, the simple and low-cost test beds are designed for real time in-circuit prognostics of power MOSFETs. The proposed condition monitoring scheme helps in estimating the condition of MOSFETs at their maximum rated operating condition and will aid the system designers to test their reliability and benchmark them before selecting in power converters.


Keywords: Keywords:Accelerated aging test, In-circuit condition monitoring, Inverter, On-state drain source resistance, Unclamped inductive switching, Wear-out condition.


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