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Vol. 186, Issue 3, March 2015, pp. 134-139




Low Loss High Isolation NEMS/MEMS Switch for High Frequency RF Applications

Elangovan R. and Usha Kiran Kommuri

School of Electronics Engineering, Vellore Institute of Technology, Chennai, TamilNadu, India

E-mail: elangovandevaki@gmail.com, usha.kiran@vit.ac.in



Received: 16 February 2015 /Accepted: 16 March 2015 /Published: 31 March 2015

Digital Sensors and Sensor Sysstems


Abstract: MEMS switches are advantageous in terms of low power consumption, switching times, high isolation, low insertion loss and many more. This paper proposes a MEMS switch with high isolation and low insertion loss. The model used is a CPW configuration with a cantilever series switch built on a silicon substrate. The switch parameters are optimized for the lowest insertion loss and return loss. An insertion loss values of -0.1305 dB in the down state with return loss of -38 dB and -75 dB of isolation have been observed in the high frequency range.


Keywords: NEMS, MEMS switch, Low Loss, High Isolation, RADAR.


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