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Vol. 92, Issue 5, May 2008, pp. 24-31




Study of Room Temperature H2S Gas Sensing Behavior of CuO-modified BSST Thick Film Resistors

H. M. Baviskar, V. V. Deo, D. R. Patil, L. A. Patil*

Materials Research Lab, P.G. Dept. of Physics, Pratap College, Amalner-425 401, India

* Corresponding author. Tel.: +91-02587-224226

E-mail address: lapresearch@rediffmail.com



Received: 27 March 2008   /Accepted: 20 May 2008   /Published: 26 May 2008


Abstract: Thick films of (Ba0.1Sr0.9)(Sn0.5Ti0.5)O3 referred as BSST, were prepared by screen-printing technique. The preparation, characterization and gas sensing properties of pure and CuO-BSST mixed oxide semiconductors have been investigated. The mixed oxides were obtained by dipping the pure BSST thick films into 0.01 M aqueous solution of CuCl2, for different intervals of time. Pure BSST was observed to be less sensitive to H2S gas. However, mixed oxides of CuO and BSST were observed to be highly sensitive to H2S gas. Upon exposure to H2S gas, the barrier height of CuO-BSST intergranular regions decreases markedly due to the chemical transformation of CuO into well conducting CuS leading to a drastic decrease in resistance. The crucial gas response was found to H2S gas at room temperature and no cross sensitivity was observed to other hazardous and polluting gases. The effects of microstructure and doping concentration on the gas response, selectivity, response and recovery of the sensor in the presence of H2S gas were studied and discussed.


Keywords: BSST, CuO, Mixed oxide, cross sensitivity, Thick film resistor and H2S gas sensor.


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