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Vol. 103, Issue 4, April 2009, pp.17-28





Dual Comb Unit High-g Accelerometer Based on CMOS-MEMS Technology


1Mehrdad Mottaghi, 1*Farzan Ghalichi, 2Habib B. Ghavifekr

1 Mechanical Eng. Dept., Sahand University of Technology, Tabriz 51335-1996, Iran

2 Electrical Eng. Dept., Sahand University of Technology, Tabriz 51335-1996, Iran

*Tel.: (98) 412-3443851

*E-mail: fghalichi@sut.ac.ir



Received: 4 February 2008   /Accepted: 20 April 2009   /Published: 27 April 2009


Abstract: In this paper a capacitive based high-g accelerometer with superior level of sensitivity is presented. It takes advantage of dual comb unit configuration and surface micromachining fabrication process. All aspects of mechanical design such as sensor structure, modal analysis, energy dissipations, dynamic response and stresses in moving structure as well as anchors are described. Electrical circuit based on CMOS technology and its output signal is presented. Fabrication process and packaging are also discussed. The proposed sensor can endure impact loads up to 120,000 g (g = 9.81 m.s-2) and achieves 16.75 V.g-1 sensitivity with 5 V bridge excitation voltage. Main resonant frequency of structure is found to be 42.4 kHz. Intended applications of suggested sensor include military and aerospace industries as well as field of impact engineering.


Keywords: High-g accelerometer, MEMS, Capacitive sensor


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