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Vol. 103, Issue 4, April 2009, pp.102-108





Porous Silicon Hydrogen Sensor at Room Temperature: The Effect of Surface Modification
and Noble Metal Contacts


Jayita KANUNGO, Hiranmay SAHA, *Sukumar BASU

IC Design & Fabrication Centre, Dept. of Electronics & Telecommunication Engineering,

Jadavpur University, Kolkata-700032, India

*Tel: +913324146217, fax: +913324146217

E-mail: sukumar_basu@yahoo.co.uk



Received: 14 January 2008   /Accepted: 20 April 2009   /Published: 27 April 2009


Abstract: Porous silicon (PS) was fabricated by anodization of p-type crystalline silicon of resistivity 2-5 Ω cm. After formation, the PS surface was modified by the solution containing noble metal like Pd. Pd-Ag catalytic contact electrodes were deposited on porous silicon and on p-Silicon to fabricate Pd-Ag/PS/p-Si/Pd-Ag sensor structure to carry out the hydrogen sensing experiments. The Sensor was exposed to 1% hydrogen in nitrogen as carrier gas at room temperature (270C). Pd modified sensor showed minimum fluctuations and consistent performance with 86% response, response time and recovery time of 24 sec and 264 sec respectively. The stability experiments were studied for both unmodified and Pd modified sensor structures for a period of about 24 hours and the modified sensors showed excellent durability with no drift in response behavior.


Keywords: Porous silicon, Pd surface modification, Heterojunction, Hydrogen sensor, Stability


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