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Vol. 103, Issue 4, April 2009, pp.144-154





Effect of Polyimide Variation and its Curing Temperature on CMOS Based Capacitive Humidity Sensor
and Characterization of Integrated Heater


1B. N. Baliga, 2D. N. Tiwari, 2Kamaljeet Singh, 2Sanjay Verma, 2K. Nagachenchaiah

Semiconductor Laboratory (SCL),

SAS Nagar, Near Chandigarh, India-160071

E-mail: baliga@isac.gov.in, tiwari@sclchd.co.in, kamaljs@sclchd.co.in



Received: 6 April 2009   /Accepted: 20 April 2009   /Published: 27 April 2009


Abstract: This paper reports humidity sensor using CMOS fabrication technology integrated with micro heater. Vertical capacitive sensor has been chosen having better nominal capacitance. Three different variants of micro heaters were fabricated and compared on both TiN and Poly-phosphorous doped silicon. The bulk-micromachining is carried out for better thermal isolation and further passivation of silicon nitride over heater is carried out for longer operational life. The effects of two different polyimide on the output capacitance have been shown. Also, the effect of curing temperature and ion implantation on the output capacitance has also been detailed.


Keywords: Bulk-micromachining, Capacitive sensor, Polyimide, Micro-heater


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