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Vol. 103, Issue 4, April 2009, pp.171-179





Hydrogen and Methane Response of Pd Gate MOS Sensor


Preeti Pandey, J.K. Srivastava, V.N. Mishra and R. Dwivedi

Center for Research in Microelectronics

Department of Electronics Engineering, Institute of Technology,

Banaras Hindu University, Varanasi 221005, India

Fax: 0542-2366758

E-mail: pandey_preeti31@ rediffmail.com



Received: 25 March 2008   /Accepted: 20 April 2009   /Published: 27 April 2009


Abstract: A sensor based on Pd/SiO2/Si MOS capacitor was fabricated on p type <100> (1-6 ΩCm) Si with thermal oxide layer of thickness about 33Ǻ. Sensor properties of the MOS structure were studied towards hydrogen (500- 3500 ppm in air) and methane gas (1000-2500  ppm in air) at room temperature and 140˚C respectively. The response of the sensor was measured as shift in C-V curve of the MOS structure. The sensitivity of the sensor towards the hydrogen (73 % at 0.03 V bias) was better than methane (19.1 % at 0.68 V bias). SEM (Scanning electron microscopy) and AFM image of the metal film show the porous structure which believed to be facilitating the catalytic oxidation of the insulator surface and higher gas response. High sensitivity of the sensor can be attributed to the change of interface state density on exposure of gases along with the formation of dipole layer.


Keywords: MOS sensor, Pd, sensitivity, hydrogen, C-V characteristics


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