Vol. 107, Issue 8, August 2009, pp.35-41

Effects of Radiation on Silicon Pressure Sensor

¹Jaspreet Singh, ¹M. M. Nayak, ¹K. Nagachenchaiah, ²K. Rajanna

Semiconductor Laboratory (SCL), S A S Nagar, Punjab, India – 160072

Dept. of Instrumentation, Indian Institute of Science, Bangalore, India – 560012

E-mail: jaspreet@sclchd.co.in, mmnayak@sclchd.co.in, chen@sclchd.co.in, kraj@isu.iisc.ernet.in

Received: 7 May 2009   /Accepted:  15 August 2009   /Published: 25 August 2009

Abstract: The performance of MEMS based piezoresistive pressure sensors is affected by the radiations. This effect is of much importance for the sensors to be used in deep space environments. To reckon these effects in-house designed and developed piezoresistive sensor is exposed to the irradiation and the change in performance parameters is measured. And corrective measures have been suggested.

Keywords: Pressure sensor, Sensitivity, Linearity, Hysteresis, Irradiation

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