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Vol. 115, Issue 4, April 2010, pp. 48-60




Fully On-chip High Q Inductors Based on Microtechnologies


*Kriyang SHAH, *Nazuhusna KHALID, *Jugdutt SINGH, *Hai P. LE,
*John DEVLIN and **Zaliman SAULI

*La Trobe University, Bundoora, Vic-3083, Australia,

Tel.: +61-3-9479 5628, fax: +61 3 9479 5209

**University of Malaysia Perlis, Kampus Kubang Gajah, 02600, Malaysia

Tel.: +4-9798289/8297, fax: +4-9798011

E-mail: k.shah@latrobe.edu.au, z.sauli@unimap.edu.my



Received: 16 March 2010   /Accepted: 20 April 2010   /Published: 27 April 2010


Abstract: Wireless biosensor networks (WBSNs) collect information about biological responses and process it using scattered battery-power sensor nodes. Such nodes demand ultra low-power consumption for longer operating time. Ultra Wide Band (UWB) is a potential solution for WBSNs due to its advantage in low power consumption at reasonable data rate. However, such UBW technology requires high quality (Q) factor passive components. This paper presents detailed analysis, design and optimization of physical parameters of silicon-on-sapphire (SOS) and micro-electro-mechanical-systems (MEMS) inductors for application in UWB transceivers. Results showed that the 1.5 nH SOS inductor achieved Q factor of 111 and MEMS inductor achieved Q factor of 45 at 4 GHz frequency. The voltage controlled oscillator (VCO) designed with SOS inductor achieved more than 10 dBc/Hz reduction in phase noise and consumed half the power compared to VCO with MEMS inductor. Such low power VCO will improve battery life of a UWB wireless sensor node.


Keywords: High Q inductor, MEMS, Silicon-on-Sapphire, Voltage controlled oscillator, Phase noise


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