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Vol. 115, Issue 4, April 2010, pp. 108-115




Generic Compact Model of Double-Gate MOSFETs Applicable to Different Operation Modes and Channels


1,2,3Xingye Zhou, 3Jian Zhang, 3Lining Zhang, 3Chenyue Ma, 1,3Xing Zhang,

1,3Jin He, and 4Mansun Chan

Key Laboratory of Integrated Microsystems, Shenzhen Graduate School of Peking University, Shenzhen 518055, P. R. China

2School of AAIS, Peking University, Beijing 100871, P. R. China

3Institute of Microelectronics, School of EECS, Peking University, Beijing 100871, P. R. China

4Department of ECE, Hong Kong University of Science & Technology, Kowloon, Hong Kong

Tel.: 86-0755-26032104, fax: 86-0755-26035377

E-mail: jinhe@ime.pku.edu.cn, zhx@pku.edu.cn



Received: 17 June 2009   /Accepted: 20 April 2010   /Published: 27 April 2010


Abstract: In this paper, the Double-Gate MOSFET’s operation modes such as symmetric, asymmetric and independent-gate-operation are discussed and an idea for the generic compact model development is proposed. It is shown that the presented model predicts different operation modes and characteristics of DG MOSEETs with channels from heavily doped to intrinsic case, which are well verified by the 2-D numerical simulator.


Keywords: Generic compact model, Double-gate (DG) MOSFET, Operation modes, Doped, Undoped


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