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Vol. 115, Issue 4, April 2010, pp. 151-159




A Method to Improve the SGADER Process and Fabricate Ultra-thick Proof Mass Inertial Sensors under the Same DRIE Technique


Haifeng DONG, Jianli LI

Daohang Xi, School of Instrumentation Science and Opto-electronics Engineering,

Beijing University of Aeronautics and Astronautics, Xueyuanlu 37 Hao, 100191, China

Tel.: 86-10-82317078, 86-10-82336813

E-mail: shanzhishan@gmail.com



Received: 2 November 2009   /Accepted: 20 April 2010   /Published: 27 April 2010


Abstract: The Silicon Glass Anodic-bonding and Deep Etching Release (SGADER) is a standardized MEMS process that has been used to fabricate various MEMS devices, especially accelerometers and gyroscopes. However, the height of SGADER structure is limited by the aspect ratio of the DRIE technique. The effect of the structure height to the resolution of the devices is analyzed. After that, an improvement to the SGADER process, so called Fusion-bonding-added SGADER (F-SGADER) process, is proposed, which avoids the aspect ratio limitation, LAG and Footing effect of DRIE and improve the resolution of SGADER devices at the same time. Another advantage of this process is that its structural vibration modes vary linearly with those of the SGADER process, which facilitates the devicesí transition from the SGADER process to the F-SGADER process. Furthermore, FEM simulation is performed to verify this property.


Keywords: SGADER, fusion bonding, accelerometer, gyroscope, inertial sensor


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