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Vol. 123, Issue 12, December 2010, pp.100-105



Photoconductive Phenomenon Observed from ZnS Layer Deposition for a Potential of IR Sensor Applications


1*Hariyadi Soetedjo and 2Gunawan S PRABOWO

1 Center for Integrated Research and Innovation, The University of Ahmad Dahlan

(CIRNOV–UAD), Jl. Cendana No 9A, Yogyakarta 55166, Indonesia.

2 Department of Instrumentations, Indonesian Aeronautics and Aerospace Institute (LAPAN), Rumpin, Bogor, Indonesia

*Tel.: +62-81 8468489, fax: +62-274-564604

E-mail: hariyadi@uad.ac.id



Received: 27 August 2010   /Accepted: 21 December 2010   /Published: 28 December 2010


Abstract: Photoconductive phenomenon has been observed from the ZnS layer deposition on the quartz substrate. Determination of film thickness of materials has been done through the fitting procedure of optical transmittance obtained from the measurement in visible-NIR (near infrared) spectral region. The optical transmittance of ZnS layer has been observed to have more oscillating from 50 to 70 % over the spectrum for thicker layer of 290 nm. These results show an encouraging work of layer thickness determination for some IR materials through a visible-NIR spectral region. The photoconductive phenomenon has been observed for a variation of temperatures introduced to the sample from 30 to 42 °C. The increase of temperature was followed by the increase of output voltage that indicates the increase of current flow due to the photoconductive phenomenon.


Keywords: ZnS, Photoconductive, Sensors, Vis-NIR


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