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Special Issue, October 2007, pp. 60-67




Microfabrication and Characterization of an Integrated 3-Axis CMOS-MEMS Accelerometer


1Hongwei QU, 2Deyou FANG and 3Huikai XIE

1Department of Electrical and Computer Engineering, Oakland University, Michigan 48309 USA

2Freescale Semiconductor, Sensors and Actuators Division, Chandler, Arizona 85224 USA

3Department of Electrical and Computer Engineering, University of Florida, Florida 32611 USA

Tel.: (1)248-370-2205, E-mail: qu2@oakland.edu



Received: 17 September 2007   /Accepted: 19 September 2007   /Published: 8 October 2007


Abstract: This paper reports the fabrication and characterization of a monolithically integrated 3-axis CMOS-MEMS accelerometer with a single proof mass. An improved microfabrication process has been developed to solve the structure overheating and particle contamination problems in the plasma etching processes of device fabrication. The whole device is made of bulk silicon except for some short thin films for electrical isolation, allowing large sensing capacitance and flat device structure. A low-noise, low-power amplifier is designed for each axis, which provides 40 dB on-chip amplification and consumes only 1 mW power. Quasi-static and dynamic characterization of the fabricated device has been performed. The measured sensitivities of the lateral- and z-axis accelerometers are 560 mV/g and 320 mV/g, respectively, which can be tuned by simply varying the amplitude of the modulation signal. The over-all noise floors of the lateral- and z-axis are 12 μg/÷Hz and 110 μg/÷Hz, respectively when tested at 200 Hz.


Keywords: CMOS-MEMS, Integration, Accelerometer, Microfabrication, Characterization


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