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Vol. 11, Special Issue, April 2011, pp.34-42



Pb(Zr,Ti)O3 (PZT) Thin Film Sensors for Fully-Integrated, Passive Telemetric Transponders


*Richard X. FU, **Ryan C. TOONEN, **Eric H. NGO, **Melanie W. COLE **Samuel G. HIRSCH, **Mathew P. IVILL, **Clifford W. HUBBARD

* Sensors & Electron Devices Directorate, U.S. Army Research Laboratory
Adelphi, MD 20783-1197

Tel.: 301-394-1473, fax: 301-394-1074

E-mail: richard.fu@arl.army.mil

** Weapons & Materials Directorate, U.S. Army Research Laboratory
Aberdeen Proving Ground, MD 21005-5069



Received: 15 December 2010   /Accepted: 15 March 2011   /Published: 5 April 2011


Abstract: The great potential of taking advantages of PZT in a single chip to achieve inexpensive, fully-integrated, passive telemetric transponders has been shown in this paper. The processes for the sputter deposition of Pb(Zr,Ti)O3 (PZT) thin films from two different composite targets on both Si and c-plane sapphire substrates have been demonstrated. PZT thin films have been deposited by sputter technique. PZT films were deposited onto substrates (Si [(100) Cz wafer] and c-plane sapphire (0001)//Ti//Pt) followed by sputter-deposited Pt top electrodes. X-ray diffraction results showed that both sputtered PZT films were textured along the [110] direction. The degree of preference for the [110] direction was greater on sapphire substrate where the intensity of that peak is seen to be larger compared to the intensity one Si substrate. TEM data revealed that both sputtered PZT films were polycrystalline in nature. Selected area diffraction (SAD) pattern showed that the degree of disorientation between the crystallites was smaller on sapphire substrate compared to on Si substrate, which confirmed the results from the XRD. The remnant polarization Pr on sapphire substrate was larger than on Siís. The leakage current for the 11 % Pb target sputtered film was much less than 22 % Pb target sputtered film. The breakdown voltage on sapphire substrate was the best. However, for the 11 % Pb target sputtered filmís breakdown voltage was much higher than 22 % Pb target sputtered film.


Keywords: PZT, Sputter deposition, Ferroelectric properties, Transponder


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