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Vol. 17, Special Issue, December 2012, pp. 13-21


Selected papers from the 4th International Conference on Intelligent & Advanced Systems (ICIAS' 2012),

12-14 June 2012, Malaysia, Kuala Lumpur




DC Characterization and Post-CMOS Processing of a Microcantilever Sensor

1* A. Mirza, 1 N. H. Hamid, 1 M. H. Md. Khir, 2 J. O. Dennis, 1 K. Ashraf

1 Department of Electrical and Electronic Engineering,

2 Department of Fundamental and Applied Sciences,

Universiti Teknologi PETRONAS, Bandar Seri Iskandar¸ 31750, Perak, Malaysia

* E-mail: assffg@gmail.com



Received: 29 September 2012   /Accepted: 29 October 2012   /Published: 18 December 2012

Digital Sensors and Sensor Sysstems


Abstract: Microcantilever sensors have attracted marvelous consideration in recent years and numerous chemical and biological detections have been performed. Monolithic integration of a microcantilever with the signal processing electronics can not only lower the sensor development cost but also reduce the total system size. However, the curling of the microstructures fabricated in the composite metal–oxide thin-film of the CMOS-MEMS process, greatly affects the overlapping area between the static and moveable capacitive comb fingers and hence offers potential challenges in capacitive sensing. This paper reports fabrication of a microcantilever using post-CMOS micromachining technique. Backside deep reactive ion etching is used to keep a silicon layer attached with the thin-film and hence control the buckling of the cantilever. DC characterization of the sensor has been carried out. The experimental results are compared with the theoretical model, in order to estimate any manufacturing tolerance caused deviation of the parameters from the designed values.


Keywords: CMOS-MEMS, DRIE, Post-CMOS, MEMS, Microcantilever sensor



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