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Vol. 17, Special Issue, December 2012, pp. 40-49


Selected papers from the 4th International Conference on Intelligent & Advanced Systems (ICIAS' 2012),

12-14 June 2012, Malaysia, Kuala Lumpur




Design, Simulation and Fabrication of a Mass Sensitive CMOS-MEMS Resonator
A. Y. Ahmed, 1 J. O. Dennis, M. H. Md Khir, M. N. Mohamad Saad and M. R. Buyong

Department of Electrical and Electronic Engineering, Universiti Teknologi PETRONAS,

Bandar Seri Iskandar, Perak, 31750 Tronoh, Malaysia

Tel.: +60175147726, +6053687829

1 Department of Fundamental and Applied Sciences, Universiti Teknologi PETRONAS,
Bandar Seri Iskandar, Perak, 31750 Tronoh, Malaysia

2 MIMOS Berhad Technology Park Malaysia 57000, Kuala Lumpur, Malaysia, Malaysia

E-mail: abdelazez23@yahoo.com


Received: 29 September 2012   /Accepted: 29 October 2012   /Published: 18 December 2012

Digital Sensors and Sensor Sysstems


Abstract: The design, simulation and fabrication of a mass-sensitive CMOS-MEMS resonator are presented in this paper. The principle of detection of the gaseous species is based on the change in resonant frequency of the microresonator as a result of the absorption/adsorption of an analyte molecule onto the surface of the active material deposited on the microresonator resulting into a change of the mass of the microresonator device. CoventorWare simulation software is used to design and simulate the micromachined resonator gas sensing platform/membrane. From simulation, the resonant frequency of the resonator is found to be 6.45 kHz and 23 kHz for mode 1 and mode 2 (in y and z direction), respectively. The frequency decreases with increasing mass added on top of the CMOS-MEMS resonator membrane and the mass sensitivity of the resonator determined to be 0.18 Hz/pg.


Keywords: Natural frequency, CMOS-MEMS, Resonator, CoventorWare and Deep Reactive Ion Etching (DRIR)



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