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Vol. 17, Special Issue, December 2012, pp. 147-157


Selected papers from the 4th International Conference on Intelligent & Advanced Systems (ICIAS' 2012),

12-14 June 2012, Malaysia, Kuala Lumpur




A Low Ripple Charge Pump Using Low-Voltage CMOS Process
1 Lee Fu NEW, 1 Zulfiqar Ali bin ABDUL AZIZ and 2 Mun Fook LEONG

1 School of Electrical and Electronic, Universiti Sains Malaysia, Penang, Malaysia

2 Intel Microelectronics (M) Sdn. Bhd., Penang, Malaysia

E-mail: nlf_eee006@student.usm.my, eezulfiq@eng.usm.my, mun.fook.leong@intel.com



Received: 29 September 2012   /Accepted: 29 October 2012   /Published: 18 December 2012

Digital Sensors and Sensor Sysstems


Abstract: In power supply systems, switching supplies are typically cascaded with low dropout (LDO) regulator to suppress noise and provide low noise output. By providing lower output ripple voltage from charge pump circuit, input noise level (ripple) can be reduced first before it is fed into LDO and hence a more stable supply voltage can be generated from LDO. In this paper, a low voltage CMOS charge pump which offers lower output ripple voltage is proposed. Charge transfer switch (CTS) control scheme is employed inside cross-coupled charge pump in order to suppress backward current leakage path during clock transition. Therefore, proposed charge pump circuit provides lower output ripple voltage and higher voltage pumping efficiency. The proposed circuit has been simulated in 45 nm CMOS process to validate the functionality of the circuit. The measured ripple voltage is less than 60 mV at 10 mA load current with 60 MHz pumping frequency.


Keywords: Charge pump, Ripple voltage, Low voltage



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