Abstract: Results of experimental comparison of the logic bipolar IC radiation hardness, under the action of electrons with energy ≈ 5.5 МeV, dose 1.25ꞏ10 ¹³ cm ^-2 , γ-quants from ⁶⁰ Co source. The inequality of Chebyshev, differential, and probability entropy were used. ICs were manufactured by the standard technology and with the use of different preliminary radiation and thermal treatments (irradiation by α-particles and accelerated electrons, followed by isothermal annealing after the technological irradiation). The possibility of sufficiently increasing (up to 40 times) the radiation resistance of logic ICs according to the U _OL criterion ("logical zero" voltage level) by using irradiation with α-particles of a radioisotope source (Φ _α = 8ꞏ10 ¹⁰ cm ^-2 , isothermal annealing at 350 °C for 20 minutes) has been experimentally demonstrated. The application of pre-radiation and thermal treatment, using 5.5 MeV electron technological irradiation (Φelectr 2ꞏ10 ¹⁶ cm ^-2 , isothermal annealing at 350 °C for 15 minutes), does not lead to a significant change in ICs radiation resistance (improvement ≈15 %). The use of the test γ-irradiation shows the complex nature of dependencies (presence of extremes with different probabilities) requires the use of entropy analysis to determine the efficiency of the application of different preliminary radiation-thermal treatment of IC (technological irradiation with α-particles or accelerated electrons). This method of analysis shows that technology, based on preliminary electron irradiation, may be a reason for high IC sample failure. For the continuous distributions of U _OL , the differential entropy is proposed to be calculated by the newly derived formula, which uses the expressions for the probability of IC U _OL . The increase in standard technology IC distribution complexity of "logic zero level", which is expressed by the bimodal distribution of U _OL before test irradiation, leads to a significant increase in probability entropy after γ-irradiation and thus reduces the numerical value of IC sample probability failure. This effect requires further analysis, for example, to determine whether it is present in IC samples, manufactured with preliminary radiation-thermal treatment and having a bimodal distribution of U _OL before test irradiation.

Keywords: Experimental comparison of the radiation resistance of IC, Different preliminary radiation and thermal treatments, Irradiation by α-particles and accelerated electrons, Isothermal annealing after the technological irradiation, entropy analysis.

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